Description
The Hall Effect is the generation of a side-to-side voltage in a conductor or semiconductor carrying a current when it is placed in a magnetic field. The effect is widely used in magnetic field sensors. It is associated with several well-known systematic errors, some of which can be eliminated by special measurement techniques.
This Hall Effect Apparatus consists of a mounted n-type semiconductor chip on a traverse mechanism, a pair of coils, relay-controlled reversing switches, and a control unit with connecting cords.
Features:
• n-type GaAs Hall sensor chip
• Helmholtz coil pair 75mm effective diameter, 11.25mT central magnetic induction at 0.5A
• Two-axis mechanical traverse for field plotting
• Constant current sources for magnet (0-0.5A) and Hall driving current (0—3mA)
• Reversing switch for exploring the elimination of systematic error
• 3-1/2 digit current and voltage meters
• Metal storage case for the Hall Effect board